MULTISTATE AMORPHOUS-SEMICONDUCTOR SWITCHCOLDREN LA; BOSCH MA; RENTSCHLER JA et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 8; PP. 688-690; BIBL. 11 REF.Article

EFFECT OF COMPOSITION AND FORMING PARAMETERS ON THE CONDUCTANCE OF AMORPHOUS CHALCOGENIDE THRESHOLD SWITCHES. = EFFET DE LA COMPOSITION ET DES PARAMETRES DE FORMATION SUR LA CONDUCTANCE DE COMMUTATEURS DE SEUIL DE CHALCOGENURE AMORPHEORMONDROYD RF; THOMPSON MJ; ALLISON J et al.1975; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1975; VOL. 18; NO 3; PP. 375-393; BIBL. 14 REF.Article

LIEN ENTRE LES COMMUTATEURS SUR UNE COUCHE COMMUNE DE VERRE CHALCOGENUREGURIN NT; ZOLOTAREV VF; SEMAK DG et al.1976; MIKROELEKTRONIKA; S.S.S.R.; DA. 1976; VOL. 5; NO 1; PP. 81-83; BIBL. 14 REF.Article

INSTRINSIC INSTABILITY AND CURRENT CHANNELLING IN THERMALLY CONTROLLED, TWO-TERMINAL SWITCHING DEVICES.MALE JC; THOMAS DL.1974; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1974; VOL. 13; NO 3; PP. 409-422; BIBL. 23 REF.Article

CIRCUIT DE COMMUTATION AUTOMATIQUE DES LIMITES DES DISPOSITIFS MESUREURS ANALOGIQUESYATSUN IA.1976; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1976; NO 1; PP. 125-126; BIBL. 2 REF.Article

ELECTRICAL CHARACTERISTICS AND THRESHOLD SWITCHING IN AMORPHOUS SEMICONDUCTORS.BUCKLEY WD; HOLMBERG SH.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 2; PP. 127-147; H.T. 1; BIBL. 16 REF.Article

MULTIPLE BRANCHING OF THE ON-STATE IN CHALCOGENIDE-GLASS THRESHOLD SWITCHES.WILLIAMS JL; IRFAN AY.1974; J. PHYS. D; G.B.; DA. 1974; VOL. 7; NO 9; PP. 1287-1290; BIBL. 10 REF.Article

POSSIBLE EXPLANATION OF THE ONSET OF SWITCHING IN THE AMORPHOUS SEMICONDUCTOR THRESHOLD SWITCH.FREDERICKS GE.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 10; PP. 4668-4669; BIBL. 7 REF.Article

AMORPHOUS-CRYSTALLINE HETEROJUNCTION TRANSISTORS.PETERSEN KE; ADLER D; SHAW MP et al.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 4; PP. 471-477; BIBL. 25 REF.Article

CONTROL OF HOLDING CURRENTS IN AMORPHOUS THRESHOLD SWITCHES.HUGHES AJ; HOLLAND PA; LETTINGTON AH et al.1975; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1975; VOL. 17; NO 1; PP. 89-99; BIBL. 6 REF.Article

PREPARATION OF VANADATE-FLASS THRESHOLD SWITCHES.HIGGINS JK; LEWIS JE; LOWE M et al.1975; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1975; VOL. 18; NO 1; PP. 77-93; BIBL. 12 REF.Article

THRESHOLD SWITCHING IN MELANIN.CULP CH; ECKELS DE; SIDLES PH et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 8; PP. 3658-3660; BIBL. 13 REF.Article

COMMUTATION DE SEUIL DANS LE SYSTEME M-A^V-B^VI-C^VIIGURIN NT; KHIMINETS VV; SEMAK DG et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 1; PP. 36-40; BIBL. 11 REF.Article

AMORPHOUS SEMICONDUCTOR THRESHOLD ON-STATE PROPERTIES AS FUNCTIONS OF DECAY TIME, AMBIENT TEMPERATURE, AND POLARITY.VEZZOLI GC; DOREMUS LW; TIRELIS GG et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 5; PP. 234-237; BIBL. 13 REF.Article

NUCLEATION THEORY OF THRESHOLD SWITCHING IN VANADATE-GLASS DEVICESGATTEF E; DIMITRIEV Y.1981; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1981; VOL. 43; NO 2; PP. 333-343; BIBL. 34 REF.Article

PROPERTIES OF FILAMENTS IN AMORPHOUS CHALCOGENIDE SEMICONDUCTING THRESHOLD SWITCHES.ORMONDROYD RF; ALLISON J; THOMPSON MJ et al.1974; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1974; VOL. 15; NO 2; PP. 310-328; BIBL. 15 REF.Article

MECANISME DE MAINTIEN DE L'ETAT ENCLENCHE DANS LES COMMUTATEURS A SEUILGURIN NT; SEMAK DG.1977; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1977; VOL. 20; NO 5; PP. 80-85; BIBL. 26 REF.Article

RADIATION EMISSION DURING THE ON STATE IN A NONCRYSTALLINE CHALCOGENIDE THRESHOLD SWITCH.VEZZOLI GC; WALSH PJ; KISATSKY PJ et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 10; PP. 4534-4538; BIBL. 14 REF.Article

ASPECTS OF THRESHOLD SWITCHING.SMITH W; SHAW RF; HENISCH HK et al.1974; ELECTROCOMPON. SCI. TECHNOL.; G.B.; DA. 1974; VOL. 1; NO 2; PP. 137-139; BIBL. 12 REF.Article

QUASISTATIC AND TRANSIENT THRESHOLD SWITCHING IN AMORPHOUS SEMICONDUCTORS.THORNBURG DD.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 3; PP. 96-99; BIBL. 10 REF.Article

THRESHOLD SWITCHING OF VIOLANTHRONE IN A SANDWICH-TYPE CELL.SADAOKA Y; SAKAI Y.1976; BULL. CHEM. SOC. JAP.; JAP.; DA. 1976; VOL. 49; NO 1; PP. 325-326; BIBL. 7 REF.Article

THE INFLUENCE OF DEVICE GEOMETRY ON INSTABILITIES IN CURRENT-CONTROLLED NEGATIVE RESISTORS.THORNBURG DD.1975; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1975; VOL. 17; NO 1; PP. 9-18; BIBL. 18 REF.Article

AN ELECTROTHERMAL MODEL FOR THRESHOLD SWITCHING IN THIN AMORPHOUS CHALCOGENIDE FILMSSHAW MP; SUBHANI KF.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 3; PP. 233-248; BIBL. 42 REF.Article

ANALYSIS OF SWITCHING MECHANISM DUE TO SPACE-CHARGE OVERLAPPING IN AMORPHOUS SEMICONDUCTOR.MIYAZOND T; IIDA M.1977; PROC. FAC. ENGNG TOKAI UNIV.; JAP.; DA. 1977; VOL. 4; PP. 1-30; BIBL. 32 REF.Article

ON STATE OF AMORPHOUS THRESHOLD SWITCHES.PETERSEN KE; ADLER D.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 1; PP. 256-263; BIBL. 44 REF.Article